DDR3 Kingston 1600MHz 4GB CL11 - KVR16N11S8H/4

FEATURES

• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

• VDDQ = 1.5V (1.425V ~ 1.575V)

• 800MHz fCK for 1600Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 11, 10, 9, 8, 7, 6

• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

allow seamless read or write [either on the fly using A12 or

MRS]

• Bi-directional Differential Data Strobe

• Internal(self) calibration : Internal self calibration through ZQ

pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C,

3.9us at 85°C < TCASE < 95°C

• Asynchronous Reset

• PCB : Height 0.740” (18.75mm) or 1.180” (30.00mm)

SPECIFICATIONS

CL(IDD) 11 cycles

Row Cycle Time (tRCmin) 48.125ns (min.)

Refresh to Active/Refresh 260ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin) 35ns (min.)

Maximum Operating Power TBD W*

UL Rating 94 V - 0

Operating Temperature 0o C to 85o C

Storage Temperature -55o C to +100o C

*Power will vary depending on the SDRAM used.